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Communication Dans Un Congrès Année : 2018

Identifying the Stray Elements of the Experimental Setup Used in the Semiconductor Datasheets

Résumé

This paper illustrates how to identify the circuit parameters of the experimental test bench used in the semiconductor datasheets to obtain the dynamic parameters as the switching energies. The method uses an optimization algorithm and a conventional MOSFET/Diode model. With these parameters, it is then possible to evaluate the performances of the device in other operating conditions as the ones proposed in the datasheet under the hypothesis that the test bench stays the same
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Dates et versions

hal-01759236 , version 1 (05-04-2018)

Identifiants

  • HAL Id : hal-01759236 , version 1

Citer

Mylène Delhommais, Jean-Luc Schanen, Frédéric Wurtz, Yvan Avenas, Rigaud Cécile, et al.. Identifying the Stray Elements of the Experimental Setup Used in the Semiconductor Datasheets. CIPS 2018, Mar 2018, Stuttgart, Germany. ⟨hal-01759236⟩
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