Identifying the Stray Elements of the Experimental Setup Used in the Semiconductor Datasheets
Résumé
This paper illustrates how to identify the circuit parameters of the experimental test bench used in the semiconductor
datasheets to obtain the dynamic parameters as the switching energies. The method uses an optimization algorithm and
a conventional MOSFET/Diode model. With these parameters, it is then possible to evaluate the performances of the
device in other operating conditions as the ones proposed in the datasheet under the hypothesis that the test bench stays
the same