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Article Dans Une Revue Ferroelectrics Année : 2013

Resistive Switching Hysteresis in Thin Films of Bismuth Ferrite

A. Razumnaya
  • Fonction : Auteur
Y. Gagou
Houssny Bouyanfif
B. Carcan
  • Fonction : Auteur
  • PersonId : 1155458
  • IdRef : 221521674
B. Allouche
Mimoun El Marssi
D. Mezzane
Igor A. Luk'Yanchuk
  • Fonction : Auteur
  • PersonId : 1154842
  • IdRef : 128881593

Résumé

We have studied the resistive switching (RS) phenomenon in series of BiFeO3 thin films of thickness of 40 ? 154~nm deposited by PLD technique on conducting Nb-doped substrate of SrTiO3 and with Pt top electrodes. It was found that 154~nm film demonstrates the interface-provided I?V characteristic of Schottky diode when the applied voltage does not exceed the threshold value Vd = 1.3 V. The RS phenomenon appears as the current hysteresis loop during the 0 ? Vm ? 0 ? ?Vm ? 0 voltage sweep cycle, provided that the maximal stop-voltage Vm is larger than Vd. For thinner films neither diode-like I?V behavior nor substantial RS effect were observed. The results are interpreted in terms of the filamentary model of the mobile oxygen vacancies.

Domaines

Matériaux
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Dates et versions

hal-01757219 , version 1 (03-04-2018)

Identifiants

Citer

A. Razumnaya, Y. Gagou, Houssny Bouyanfif, B. Carcan, B. Allouche, et al.. Resistive Switching Hysteresis in Thin Films of Bismuth Ferrite. Ferroelectrics, 2013, 444 (1), pp.183--189. ⟨10.1080/00150193.2013.790759⟩. ⟨hal-01757219⟩
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