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Communication Dans Un Congrès Année : 2017

Fully passive conductive-bridging solid state RF switch

Résumé

This study reports the design and experimental results of a fully-passive solid-state RF switch based on the Conductive Bridging Memory Technology, popularly known as CBRAM. The developed device is a shunt mode RF switch based on a Metal-Insulator-Metal (MIM) structure with Copper-Nafion-Aluminum switching layers on a Coplanar Waveguide (CPW) transmission line, operational in the DC to 3GHz range. DC pulses in the range +12V to-20V are used to operate the switch. The design is initially simulated using the FEM based CST microwave Studio and then realized and validated on a low cost FR4 substrate, and without using any sophisticated clean room technology.

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Dates et versions

hal-01753177 , version 1 (13-01-2020)

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Jayakrishnan Methapettyparambu Purushothama, Arnaud Vena, Brice Sorli, Etienne Perret. Fully passive conductive-bridging solid state RF switch. 2017 XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS), Aug 2017, Montreal, France. ⟨10.23919/ursigass.2017.8105259⟩. ⟨hal-01753177⟩
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