ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017

ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology

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Sciences de l'ingénieur [physics] Micro et nanotechnologies/Microélectronique

Mathieu Moreau  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01745666

Soumis le : mercredi 28 mars 2018-14:26:41

Dernière modification le : lundi 10 juin 2024-16:58:03

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hal-01745666 , version 1 (28-03-2018)

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Citer

Hassen Aziza, P. Canet, J. Postel-Pellerin, Mathieu Moreau, Jean-Michel Portal, et al.. ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology. 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. ⟨10.1109/ULIS.2017.7962594⟩. ⟨hal-01745666⟩

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