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Article Dans Une Revue Materials Science and Engineering: B Année : 2004

Study of the chemical and structural organization of SIPOS films at the nanometer scale by TEM-EELS and XPS

Résumé

Two films of semi-insulating polycrystalline silicon (SIPOS) have been prepared by low pressure chemical vapor deposition (LPCVD). Their physico-chemical properties are studied at the nanometer scale with transmission electron microscopy (TEM)–electron energy loss spectroscopy (EELS) and X-ray photoelectron spectroscopy (XPS) techniques by taking into account two main input parameters: the oxygen content and the condition of post-deposition anneal. The compositions of the films are SiO0.17 and SiO0.48. They are made of nanocrystalline silicon embedded in a SiOx matrix with different oxidation states of the silicon atoms. The less the films are oxygenated or the more the films are heat-treated, the more the fraction of crystallized silicon. This study provided a strong baseline to set up a process of fabrication for applications such as high voltage transistors.

Dates et versions

hal-01745051 , version 1 (27-03-2018)

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Citer

Sylvie Schamm-Chardon, R Berjoan, P Barathieu. Study of the chemical and structural organization of SIPOS films at the nanometer scale by TEM-EELS and XPS. Materials Science and Engineering: B, 2004, 107 (1), pp.58-65. ⟨10.1016/j.mseb.2003.10.010⟩. ⟨hal-01745051⟩
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