On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2016

On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

Abstract

In this contribution, we performed the growth of a 3C-SiC/Si/3C-SiC layer stack on a Si(001) substrate by means of chemical vapor deposition. We show that, by tuning the growth conditions, the 3C-SiC epilayer can be grown along either the [111] direction or the [110] direction. The key parameter for the growth of the desired 3C-SiC orientation on the Si(110)/3C-SiC(001)/Si(001) het-erostructure is highlighted and is linked to the Si epilayer surface morphology. The epitaxial relation between the layers has been identified using X-ray diffraction and transmission electron microscopy (TEM). We showed that, regardless of the top 3C-SiC epilayer orientation, domains rotated by 90 around the growth direction are present in the epilayer. Furthermore, the difference between the two 3C-SiC orientations was investigated by means of high magnification TEM. The results indicate that the faceted Si(110) epilayer surface morphology results in a (110)-oriented 3C-SiC epilayer, whereas a flat hetero-interface has been observed between 3C-SiC(111) and Si(110). The control of the top 3C-SiC growth direction can be advantageous for the development of new micro-electro-mechanical systems. Published by AIP Publishing.
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Dates and versions

hal-01740987 , version 1 (22-03-2018)

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Rami Khazaka, Jean-François Michaud, Philippe Vennegues, Luan Nguyen, Daniel Alquier, et al.. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction. Journal of Applied Physics, 2016, 120, pp.185306 - 141907. ⟨10.1063/1.4967741⟩. ⟨hal-01740987⟩
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