«Magnetoelectric coupling in Tb₀.₃Dy₀.₇Fe₂/Pt/PbZr₀.₅₆Ti₀.₄₄O₃ thin film heterostructure deposited on Pt/TiO₂/SiO₂/Si substrate» - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2014

«Magnetoelectric coupling in Tb₀.₃Dy₀.₇Fe₂/Pt/PbZr₀.₅₆Ti₀.₄₄O₃ thin film heterostructure deposited on Pt/TiO₂/SiO₂/Si substrate»

Résumé

Tb0.3Dy0.7Fe2/Pt/PbZr0.56Ti0.44O3(Terfenol-D/Pt/PZT) thin films were sputtered on Pt/TiO2/SiO2/Sisubstrate. PZT and Terfenol-D layers were chosen for their large piezoelectric and magnetostrictivecoefficients, respectively. 4%–5% magnetocapacitance has been measured on a Terfenol-D/Pt/PZTstack at room temperature. A magnetoelectric (ME) voltage coefficient of 150 mV/cm Oe wasobtained at low dc magnetic field out of mechanical resonance. This work demonstrates thepossibility to achieve ME effect in integrated devices involving Terfenol-D and PZT thin filmsproviding that the diffusion, which may occur between both active layers is reduced using anintermediate layer.
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Dates et versions

hal-01739754 , version 1 (21-03-2018)

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  • HAL Id : hal-01739754 , version 1

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J. More-Chevalier, A. Ferri, C. Cibert, G. Poullain, R. Bouregba, et al.. «Magnetoelectric coupling in Tb₀.₃Dy₀.₇Fe₂/Pt/PbZr₀.₅₆Ti₀.₄₄O₃ thin film heterostructure deposited on Pt/TiO₂/SiO₂/Si substrate». 13èmes Journées de Caractérisation Microondes et Matériaux – JCMM2014, Mar 2014, Nantes, France. 2014. ⟨hal-01739754⟩
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