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Article Dans Une Revue Solid-State Electronics Année : 2015

A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAM

Résumé

— Resistive Random Access Memory (RRAM) is a form of nonvolatile storage that operates by changing the resistance of a specially formulated solid dielectric material [1]. Among RRAMs, Oxide-based Resistive RAMs (so-called OxRRAMs) are promising candidates due their compatibility with CMOS processes and high ON/OFF resistance ratio. Common problems with OxRRAM are related to high variability in operating conditions and low yield. OxRRAM variability mainly impact ON/OFF resistance ratio. This ratio is a key parameter to determine the overall performance of an OxRRAM memory. In this context, the presented built-in structure allows collecting statistical data related to the OxRRAM memory array (ON/OFF resistance distributions) for reliability assessment of the technology.
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Dates et versions

hal-01737300 , version 1 (19-03-2018)

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Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal. A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAM. Solid-State Electronics, 2015, 103, pp.73 - 78. ⟨10.1016/j.sse.2014.09.005⟩. ⟨hal-01737300⟩
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