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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2014

Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

Résumé

—Emerging non-volatile memories based on resistive switching mechanisms pull intense R&D efforts from both academia and industry. Oxide-based Resistive Random Access Memories (namely OxRAM) gather noteworthy performances, such as fast write/read speed, low power, high endurance and large integration density that outperform conventional Flash memories. To fully explore new design concepts such as distributed memory in logic or biomimetic architectures, robust OxRAM compact models must be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we propose a physics-based compact model used in electrical simulator for bipolar OxRAM memories. After uncovering the theoretical background and the set of relevant physical parameters, this model is confronted to experimental electrical data. The excellent agreement with these data suggests that this model can be confidently implemented into circuit simulators for design purpose.
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Dates et versions

hal-01737291 , version 1 (19-03-2018)

Identifiants

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Marc Bocquet, Damien Deleruyelle, Hassen Aziza, Christophe Muller, Jean-Michel Portal, et al.. Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories. IEEE Transactions on Electron Devices, 2014, 61 (3), pp.674 - 681. ⟨10.1109/TED.2013.2296793⟩. ⟨hal-01737291⟩
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