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Article Dans Une Revue Applied Physics Letters Année : 2003

Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

Résumé

The evolution of {113} defects as a function of time and depth within Si implant-generated defect profiles has been investigated by transmission electron microscopy. Two cases are considered: one in which the {113} defects evolve into dislocation loops, and the other, at lower dose and energy, in which the {113} defects grow in size and finally dissolve. The study shows that dissolution occurs preferentially at the near-surface side of the defect band, indicating that the silicon surface is the principal sink for interstitials in this system. The results provide a critical test of the ability of physical models to simulate defect evolution and transient enhanced diffusion.
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hal-01736110 , version 1 (27-03-2018)

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Citer

B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Nikolay Cherkashin, et al.. Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon . Applied Physics Letters, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩. ⟨hal-01736110⟩
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