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Article Dans Une Revue Materials Science and Engineering: B Année : 2005

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Résumé

The incorporation of compressive strained Ge/tensile strained Si bi-layers in the active regions of MOSFETs is a promising route for creating ultimate Si-based devices due to the considerable increase of the mobility of spatially confined holes/electrons. The main challenge in device application is to be able to control and manipulate strain within such thin layers. This paper reports on quantitative measurements of strain in a structure consisting of a 8 nm Ge/5 nm Si heterostructure grown by chemical vapour deposition on top of a relaxed Si0.5Ge0.5 buffer layer. Geometric phase analysis of high resolution TEM images is used to measure the strain within Ge and Si layers. The in-plane stress within each layer is deduced. Experimental results are compared with the predictions of elasticity theory and discussed in terms of effect of defect formation.

Dates et versions

hal-01736084 , version 1 (16-03-2018)

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Nikolay Cherkashin, Martin Hÿtch, Etienne Snoeck, Alain Claverie, J.M. Hartmann, et al.. Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate. Materials Science and Engineering: B, 2005, 124-125, pp.118--122. ⟨10.1016/j.mseb.2005.08.054⟩. ⟨hal-01736084⟩
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