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Communication Dans Un Congrès Année : 2008

Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate

Résumé

In this work, we performed quantitative measurements of strain in structures consisting of a 30 nm-thick Si1-yCy layer grown by chemical vapour deposition (CVD) on a Si (001) substrate. Total C concentrations vary from 0.67 to 2%. Geometric phase analysis (GPA) of high-resolution transmission electron microscopy (HR TEM) cross-section images and convergent-beam electron diffraction (CBED) with a nanometer resolution as well as Raman spectroscopy and high-resolution X-ray diffraction with a micro- and millimeter resolutions, respectively, were used to deduce the strain within these Si1-yCy layers. These results were compared with the predictions of elasticity theory. Particular interest is paid to the formation of the structural defects within Si1-yCy layers as a function of C concentration, growth temperature and incorporated strain.
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Dates et versions

hal-01736065 , version 1 (16-03-2018)

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Nikolay Cherkashin, Adrien Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch, et al.. Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate. ECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩. ⟨hal-01736065⟩
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