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Article Dans Une Revue Semiconductors Année : 2009

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

Résumé

Processes of active-region formation for green LEDs on the basis of multilayer strained InGaN/GaN nanoheterostructures have been studied. It is shown that the formation of structures of this kind is highly affected by elastic stress relaxation leading to a larger amount of indium incorporated into InGaN layers. For structures emitting in the blue spectral range, an increase in the number of quantum wells (QWs) from 1 to 10 does not lead to stress relaxation or to a shift of the emission wavelength, whereas for structures emitting in the green spectral range, raising the number of QWs from one to five causes a monotonic increase in the emission wavelength.

Dates et versions

hal-01736055 , version 1 (16-03-2018)

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Citer

A.V. Sakharov, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.E. Nikolaev, et al.. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs. Semiconductors, 2009, 43 (6), pp.812-817. ⟨10.1134/S1063782609060232⟩. ⟨hal-01736055⟩
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