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Article Dans Une Revue Journal of Applied Physics Année : 2009

End of range defects in Ge

Résumé

We show that the solid-phase epitaxial regrowth of amorphous layers created by ion implantation in Ge results in the formation of extended defects of interstitial-type. During annealing, these defects evolve in size and density following, as in Si, an Ostwald ripening mechanism. However, this process becomes nonconservative as the annealing temperature increases to 600 °C. This suggests that the recombination/annihilation of Ge interstitial atoms becomes important at these temperatures. These results have important implications for the modeling of diffusion of implanted dopants in Ge.
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Dates et versions

hal-01736054 , version 1 (23-03-2018)

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S. Koffel, Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, Gérard Benassayag, et al.. End of range defects in Ge. Journal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩. ⟨hal-01736054⟩
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