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Article Dans Une Revue Semiconductors Année : 2010

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Résumé

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Dates et versions

hal-01736052 , version 1 (16-03-2018)

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A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, et al.. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes. Semiconductors, 2010, 44 (1), pp.93-97. ⟨10.1134/S1063782610010161⟩. ⟨hal-01736052⟩
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