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Article Dans Une Revue Applied Physics Letters Année : 2010

Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

Résumé

We have quantitatively studied by transmission electron microscopy the growth kinetics of platelets formed during the continuous hydrogenation of a Si substrate/SiGe/Si heterostructure. We have evidenced and explained the massive transfer of hydrogen from a population of platelets initially generated in the upper Si layer by plasma hydrogenation towards a population of larger platelets located in the SiGe layer. We demonstrate that this type of process can be used not only to precisely localize the micro-cracks, then the fracture line at a given depth but also to “clean” the top layer from pre-existing defects.
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hal-01736050 , version 1 (23-03-2018)

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F. Okba, Nikolay Cherkashin, Z. Di, M. Nastasi, F. Rossi, et al.. Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer. Applied Physics Letters, 2010, 97 (3), pp.31917-31917. ⟨10.1063/1.3467455⟩. ⟨hal-01736050⟩
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