Optoelectronic structures with InAlN layers grown by MOVPE
Résumé
The results of the some practical applications of InAlN layers in a device hetrostructures grown by MOVPE is presented. It is shown that use of InAlN allows not only create high-quality DBRs and HEMT structures, but also effectively modify properties of InAlN/GaN/InGaN light-emitting devices.
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