Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Non-truncated pyramidal In(Ga)As quantum dots (QDs) embedded in GaAs were obtained by a combination of low temperature/high rate GaAs covering of InAs QDs. We use advanced transmission electron microscopy to study the composition and mechanics of the objects. Results from the core region of a sliced QD, and from an entire object, are consistent and complementary allowing the development of accurate models describing the 3D shape, chemical distribution, elastic strains and stresses in the QD, wetting layer, and matrix. The measured structure develops an extremely compressive apex, reaching a vertical stress of −8 GPa and horizontal stress of −6.2 GPa.

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Science des matériaux [cond-mat.mtrl-sci]

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1.4804380.pdf (2.58 Mo)

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https://hal.science/hal-01736028

Soumis le : jeudi 22 mars 2018-15:46:58

Dernière modification le : mardi 3 septembre 2024-11:16:05

Archivage à long terme le : jeudi 13 septembre 2018-07:53:35

Dates et versions

hal-01736028 , version 1 (22-03-2018)

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HAL Id : hal-01736028 , version 1
DOI : 10.1063/1.4804380

Citer

Nikolay Cherkashin, Shay Reboh, Martin Hÿtch, Alain Claverie, V.V. Preobrazhenskii, et al.. Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy. Applied Physics Letters, 2013, 102 (17), pp.173115. ⟨10.1063/1.4804380⟩. ⟨hal-01736028⟩

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