Modelling of the transition from a planar faceted front to equiaxed growth: Application to photovoltaic polycrystalline silicon - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Crystal Growth Année : 2008

Modelling of the transition from a planar faceted front to equiaxed growth: Application to photovoltaic polycrystalline silicon

Résumé

Recent experiments under X-ray examination have shown that a transition from planar front to equiaxed growth is likely to occur in the case of faceted interfaces. Such a transition is suspected to be at the origin of the sudden occurrence of deleterious small grains, among large columnar grains, observed in photovoltaic silicon ingots. A model is presented for the occurrence of equiaxed grains observed ahead of a planar faceted interface. Simple expressions are obtained which predict when the equiaxed structures should develop, in the case of rough (thermal dendrite) and of faceted equiaxed grains. These models provide a semiquantitative basis to discuss the Faceted front to Equiaxed structure Transition (FET). Then, it is applied to the case-study of photovoltaic silicon. Further developments are proposed to improve the model.

Domaines

Matériaux

Dates et versions

hal-01728120 , version 1 (09-03-2018)

Identifiants

Citer

Nathalie Mangelinck-Noel, Thierry Duffar. Modelling of the transition from a planar faceted front to equiaxed growth: Application to photovoltaic polycrystalline silicon. Journal of Crystal Growth, 2008, 311 (1), pp.20 - 25. ⟨10.1016/j.jcrysgro.2008.10.011⟩. ⟨hal-01728120⟩
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