Structural and electrical characteristics of GaN, n-GaN and A1 x Ga 1−x N - Archive ouverte HAL
Journal Articles Journal of Alloys and Compounds Year : 2016

Structural and electrical characteristics of GaN, n-GaN and A1 x Ga 1−x N

P. Arivazhagan
  • Function : Author
R. Ramesh
  • Function : Author
Crystal Growth Centre [Chennai]
Ramadoss Roop Kumar
  • Function : Author
Eric Faulques
Institut des Matériaux Jean Rouxel
Fouad Bennis
Institut de Recherche en Communications et en Cybernétique de Nantes
CV
K. Baskar
  • Function : Author

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Materials Science [cond-mat.mtrl-sci]

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https://hal.science/hal-01723595

Submitted on : Monday, March 5, 2018-4:07:49 PM

Last modification on : Tuesday, April 30, 2024-11:42:16 AM

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hal-01723595 , version 1 (05-03-2018)

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P. Arivazhagan, R. Ramesh, Ramadoss Roop Kumar, Eric Faulques, Fouad Bennis, et al.. Structural and electrical characteristics of GaN, n-GaN and A1 x Ga 1−x N. Journal of Alloys and Compounds, 2016, 656, pp.110 - 118. ⟨10.1016/j.jallcom.2015.09.102⟩. ⟨hal-01723595⟩

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