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Communication Dans Un Congrès Année : 2015

Realistic model of LED structure with InGaN quantum-dots active region

Résumé

We report on numerical simulations of quantum-dot heterostructures derived from experimental high-resolution transmission electron microscopy results. A real sample containing large InGaN islands with size of ten of nm and non-uniform In content is analyzed. The three-dimensional models for the quantum dots have been directly extrapolated from experimental results by a numerical algorithm. We show electromechanical, continuum k→ · p→, empirical tight-binding and optical calculations for these realistic structures, which present a very good agreement if compared with experimental measurements, implying that the use of realistic structures can provide significant improvements into the modeling and the understanding of quantum-dot nanostructures.
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Dates et versions

hal-01721150 , version 1 (01-03-2018)

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Daniele Barettin, Matthias auf Der Maur, Alessandro Pecchia, Walter Rodrigues, Andrei F. Tsatsulnikov, et al.. Realistic model of LED structure with InGaN quantum-dots active region. Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.1543-1546, ⟨10.1109/NANO.2015.7388939⟩. ⟨hal-01721150⟩
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