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Article Dans Une Revue Journal of Applied Physics Année : 2015

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Mathieu Kociak
Julien Barjon
Thomas Rivera

Résumé

Advanced electron microscopy techniques are combined for the first time to measure the composition, strain, and optical luminescence, of InGaN/GaN multi-layered structures down to the nanometer scale. Compositional fluctuations observed in InGaN epilayers are suppressed in these multi-layered structures up to a thickness of 100 nm and for an indium composition of 16%. The multi-layered structures remain pseudomorphically accommodated on the GaN substrate and exhibit single-peak, homogeneous luminescence so long as the composition is homogeneous.
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hal-01721149 , version 1 (02-03-2018)

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Konstantinos Pantzas, Gilles Patriarche, David Troadec, Mathieu Kociak, Nikolay Cherkashin, et al.. Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys. Journal of Applied Physics, 2015, 117 (5), pp.55705. ⟨10.1063/1.4907210⟩. ⟨hal-01721149⟩
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