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Article Dans Une Revue Journal of Electron Spectroscopy and Related Phenomena Année : 2015

Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

Résumé

Abstract Downscaling of transistors beyond the 14 nm technological node requires the implementation of new architectures and materials. Advanced characterization methods are needed to gain information about the chemical composition of buried layers and interfaces. An effective approach based on backside analysis is presented here. X-ray photoelectron spectroscopy, Auger depth profiling and time-of-flight secondary ions mass spectrometry are combined to investigate inter-diffusion phenomena. To highlight improvements related to the backside method, backside and frontside analyses are compared. Critical information regarding nitrogen, oxygen and aluminium redistribution inside the gate stacks is obtained only in the backside configuration. © 2015 Elsevier B.V.
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Dates et versions

hal-01720448 , version 1 (01-03-2018)

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E. Martinez, B. Saidi, M. Veillerot, P. Caubet, J.-M. Fabbri, et al.. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks. Journal of Electron Spectroscopy and Related Phenomena, 2015, 203, pp.1-7. ⟨10.1016/j.elspec.2015.04.022⟩. ⟨hal-01720448⟩
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