Germanium condensation for co-integration: Strain study by dark-field electron holography
Résumé
We study the strain characteristics of thin SiGe layers on insulator processed by the germanium condensation technique. We perform dark-field electron holography measurements and show the relation between strain and Ge content in the layers. The characteristics of the condensation process are discussed for the realization of co-integrated MOS structures. © 2014 IEEE.
Mots clés
BiCMOS technology
CMOS integrated circuits
Condensation
Electron holography
Holography
Silicon
Silicon on insulator technology
Strain measurement
Transmission electron microscopy
CMOS processs
Cointegration
Condensation process
Condensation techniques
Dark-field electron holographies
Silicon Germanium
Strain characteristics
Thin SiGe layer
Germanium