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Communication Dans Un Congrès Année : 2015

Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures

Résumé

In this paper we explore the benefit of combining High Resolution X-Ray Reciprocal Space Mapping (HR-RSM) and Dark-Field Electron Holography (DFEH) techniques for strain characterization of thin pMOS-like structures. We are able to simulate the measured HR-RSM from the displacement field extracted by DFEH. This is a first step developing High Resolution X-Ray Diffraction (HRXRD) as a viable technique for in-line strain metrology. © 2015 IEEE.
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Dates et versions

hal-01719495 , version 1 (28-02-2018)

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Aurèle Durand, Victor Boureau, Delphine Lecunff, Axel Hourtane, Daniel Benoit, et al.. Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures. Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.785-788, ⟨10.1109/NANO.2015.7388727⟩. ⟨hal-01719495⟩
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