Solution Epitaxial Growth of Cobalt Nanowires on Crystalline Substrates for Data Storage Densities beyond 1 Tbit/in 2 - Archive ouverte HAL
Article Dans Une Revue Nano Letters Année : 2014

Solution Epitaxial Growth of Cobalt Nanowires on Crystalline Substrates for Data Storage Densities beyond 1 Tbit/in 2

Thomas Blon
Grégory Chaboussant
Frédéric Ott

Résumé

The implementation of nano-objects in numerous emerging applications often demands their integration in macroscopic devices. Here we present the bottom-up epitaxial solution growth of high-density arrays of vertical 5 nm diameter single-crystalline metallic cobalt nanowires on wafer-scale crystalline metal surfaces. The nanowires form regular hexagonal arrays on unpatterned metallic films. These hybrid heterostructures present an important perpendicular magnetic anisotropy and pave the way to a high density magnetic recording device, with capacities above 10 Terabits/in2. This method bypasses the need of assembling and orientating free colloidal nanocrystals on surfaces. Its generalization to other materials opens new perspectives toward many applications.
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hal-01707052 , version 1 (12-02-2018)

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Nikolaos Liakakos, Thomas Blon, Charbel Achkar, Virginie Vilar, Benoit Cormary, et al.. Solution Epitaxial Growth of Cobalt Nanowires on Crystalline Substrates for Data Storage Densities beyond 1 Tbit/in 2. Nano Letters, 2014, 14 (6), pp.3481 - 3486. ⟨10.1021/nl501018z⟩. ⟨hal-01707052⟩
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