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Article Dans Une Revue Journal of Applied Physics Année : 2017

Piezo-tunnel effect in Al/Al2O3/Al junctions elaborated by atomic layer deposition

Rémi Rafael
Etienne Puyoo

Résumé

In this work, the electrical transport in Al/Al2O3/Al junctions under mechanical stress is investigated in the perspective to use them as strain sensors. The metal/insulator/metal junctions are elaborated with a low temperature process (≤200 °C) fully compatible with CMOS back-end-of-line. The conduction mechanism in the structure is found to be Fowler-Nordheim tunneling, and efforts are made to extract the relevant physical parameters. Gauge factors up to −32.5 were found in the fabricated devices under tensile stress. Finally, theoretical mechanical considerations give strong evidence that strain sensitivity in Al/Al2O3/Al structures originates not only from geometrical deformations but also from the variation of interface barrier height and/or effective electronic mass in the tunneling oxide layer.
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Dates et versions

hal-01701523 , version 1 (05-02-2018)

Identifiants

  • HAL Id : hal-01701523 , version 1

Citer

Rémi Rafael, Etienne Puyoo, Christophe Malhaire. Piezo-tunnel effect in Al/Al2O3/Al junctions elaborated by atomic layer deposition. Journal of Applied Physics, 2017, 122, pp.184501. ⟨hal-01701523⟩
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