HfOx complementary resistive switches
Résumé
This paper proposes the fabrication, together with morphological and electrical characterizations of complementary resistive switches using a nanodamascene process. Complementary switches electrical performance are coherent with ReRAM fabricated and characterized with the same procedure that showed Ron/Roff ratios of 100. Complementary operating voltages of Vth1,3 = |0.8| V and Vth2.4 = |1.1| V are obtained for 88×22 nm2 junction with 6 nm thick HfOx.