Phase formation between Ni thin films and GaAs substrate - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Scripta Materialia Année : 2017

Phase formation between Ni thin films and GaAs substrate

Résumé

In situ X-Ray Diffraction, X-Ray Reflectivity and High Resolution Transmission Electron Microscopy were used to investigate the sequence and the texture of phase formation during the solid-state reaction of Ni thin film with GaAs substrate. These results show the formation of a unique Ni3GaAs crystalline phase at 200 degrees C that remains stable until 400 degrees C. The epitaxial relationships between this phase and the GaAs substrate were also evidenced. The formation of this unique phase, along with the variation of its lattice parameters when Ni is totally consumed, can be explained by local thermodynamic equilibrium and kinetics arguments. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Fichier non déposé

Dates et versions

hal-01694002 , version 1 (26-01-2018)

Identifiants

Citer

S. Rabhi, C. Perrin-Pellegrino, S. Zhiou, M. C. Benoudia, M. Texier, et al.. Phase formation between Ni thin films and GaAs substrate. Scripta Materialia, 2017, 141, pp.28-31. ⟨10.1016/j.scriptamat.2017.07.011⟩. ⟨hal-01694002⟩
52 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More