The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells - Archive ouverte HAL Access content directly
Journal Articles Journal of Microscopy Year : 2018

The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

Tim Grieb
  • Function : Author
Andreas Rosenauer
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  • PersonId : 877070

Abstract

In this work, we analyse the microstructure and local chemical composition of green-emitting InxGa1-xN/GaN quantum well (QW) heterostructures in correlation with their emission properties. Two samples of high structural quality grown by metalorganic vapour phase epitaxy (MOVPE) with a nominal composition of x = 0.15 and 0.18 indium are discussed. The local indium composition is quantitatively evaluated by comparing scanning transmission electron microscopy (STEM) images to simulations and the local indium concentration is extracted from intensity measurements. The calculations point out that the measured indium fluctuations may be correlated to the large width and intensity decrease of the PL emission peak.

Dates and versions

hal-01691523 , version 1 (24-01-2018)

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Nicolas Chery, Thi Huong Ngo, M.P. Chauvat, B. Damilano, A Courville, et al.. The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells. Journal of Microscopy, 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩. ⟨hal-01691523⟩
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