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Article Dans Une Revue Microwave and Optical Technology Letters Année : 2018

Low group delay variation 3-10 GHz 65 nm CMOS stacked power amplifier with 18.1 dBm peak 1 dB compression output power

Résumé

A 3-10 GHz stacked power amplifier (PA) with low group delay variation and 18.1 dBm peak 1 dB compression output power (P1dB) in 65 nm CMOS bulk technology is presented. It is intended for ultra-wideband or multiband telecommunication, sensing, and instrumentation systems operating in the 3-10 GHz frequency range situated in the S, C, and X bands. Its design, based on stacked transistors allowing a supply voltage as high as 4 V to achieve a high 1 dB compression output power, is detailed. In the 3–10 GHz band, the proposed PA provides measured gain, P1dB, and maximum power added efficiency (PAEmax) of 12.65 ± 1.25 dB, 16 ± 2.1 dBm, and 20.15 ± 7.55%, respectively. In addition, in its frequency range of operation, this PA achieves an excellent measured group delay variation of ±21.55 ps. To the authors’ knowledge, this wideband PA offers the lowest group delay variation in this frequency range of operation.
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Dates et versions

hal-01687686 , version 1 (18-01-2018)

Identifiants

Citer

David Polge, Anthony Ghiotto, Eric Kerherve, Pascal Fabre. Low group delay variation 3-10 GHz 65 nm CMOS stacked power amplifier with 18.1 dBm peak 1 dB compression output power. Microwave and Optical Technology Letters, 2018, 60 (2), pp.400 - 405. ⟨10.1002/mop.30975⟩. ⟨hal-01687686⟩
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