Hydrogen Diffusion and Shallow Acceptor Passivation in p‐Type InP
Résumé
Hydrogen diffusion in InP:Zn, protected by an undoped GalnAs epilayer, has been performed from a hydrogen plasma exposure. Passivation of shallow acceptors occurs in the hydrogen diffused region of InP:Zn. Secondary ion mass spectrometry, transport measurements and thermal annealing experiments indicate the existence of neutral Zn,H pairs in InP:Zn,H. We find that these pairs have a relatively higher thermal stability than in GaAs:Zn. This is interpreted with the help of the microscopic description of the Zn,H complexes.
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