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Article Dans Une Revue Surface and Coatings Technology Année : 2010

Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation

Résumé

AlN growth by HTCVD (High Temperature Chemical Vapor Deposition) from AlCl3 and NH3 is currently a promising way to obtain thick, compact layers of aluminum nitride. This study focused on the development of a kinetic mechanism that models AlN growth with only 7 gas-phase reactions and 4 surface reactions. Ab initio estimation of the thermodynamic data of the AlCl2NH2, AlClNH, AlCl(NH2)2 and Al(NH2)3 intermediates suspected to be involved in the gas-phase reactions is proposed. It was found that only AlCl2NH2 is present in noticeable concentrations under our experimental conditions. Experiments made at different temperatures and N/Al ratios, carried out in a cold wall HTCVD reactor, were used to validate the proposed model. Finally, the N/Al ratio in the gas phase was observed to play a key role in the AlN surface quality. Possible explanations of this influence and future experiments that will confirm this trend are discussed.

Domaines

Chimie Matériaux

Dates et versions

hal-01658032 , version 1 (07-12-2017)

Identifiants

Citer

R. Boichot, A. Claudel, N. Baccar, A. Milet, E. Blanquet, et al.. Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation. Surface and Coatings Technology, 2010, 205 (5), pp.1294 - 1301. ⟨10.1016/j.surfcoat.2010.08.049⟩. ⟨hal-01658032⟩
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