-low temperature GaAs/GaInP FET: device technology and characterization - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 1996

-low temperature GaAs/GaInP FET: device technology and characterization

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hal-01654286 , version 1 (03-12-2017)

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  • HAL Id : hal-01654286 , version 1

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Didier Theron, B. Boudart, Mohamed Zaknoune, Francis Mollot, Y. Druelle, et al.. -low temperature GaAs/GaInP FET: device technology and characterization. Workshop on non-stoichiometric GaAs and related materials, 1996, Santa Barbara, United States. ⟨hal-01654286⟩
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