Article Dans Une Revue Solid-State Electronics Année : 2009

Investigation of 1/f noise in germanium-on-insulator 0.12μm PMOS transistors from weak to strong inversion

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hal-01653006 , version 1 (30-11-2017)

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F. Martinez, J. Gyani, M. Valenza, S. Soliverès, C. Le Royer, et al.. Investigation of 1/f noise in germanium-on-insulator 0.12μm PMOS transistors from weak to strong inversion. Solid-State Electronics, 2009, 53 (12), pp.1268 - 1272. ⟨10.1016/j.sse.2009.10.011⟩. ⟨hal-01653006⟩
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