Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard switching performances evolution - Archive ouverte HAL
Communication Dans Un Congrès Année : 2005

Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard switching performances evolution

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Sciences de l'ingénieur [physics] Electronique

Bertrand BOUDART  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01651277

Soumis le : mardi 28 novembre 2017-19:21:21

Dernière modification le : mercredi 9 mars 2022-14:14:03

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hal-01651277 , version 1 (28-11-2017)

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  • HAL Id : hal-01651277 , version 1

Citer

C.O. Maïga, Boubekeur Tala-Ighil, H. Toutah, B. Boudart. Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard switching performances evolution. 11th European Conference on Power Electronics and Applications (EPE 2005), 2005, Dresden, Germany. ⟨hal-01651277⟩

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