Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard switching performances evolution - Archive ouverte HAL Access content directly
Conference Papers Year : 2005

Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard switching performances evolution

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hal-01651277 , version 1 (28-11-2017)

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  • HAL Id : hal-01651277 , version 1

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C.O. Maïga, Boubekeur Tala-Ighil, H. Toutah, B. Boudart. Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard switching performances evolution. 11th European Conference on Power Electronics and Applications (EPE 2005), 2005, Dresden, Germany. ⟨hal-01651277⟩
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