Behaviour of punch - through and non - punch – through insulated gate bipolar transistors under high temperature gate bias stress - Archive ouverte HAL
Communication Dans Un Congrès Année : 2004

Behaviour of punch - through and non - punch – through insulated gate bipolar transistors under high temperature gate bias stress

Domaines

Sciences de l'ingénieur [physics] Electronique

Bertrand BOUDART  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01649561

Soumis le : lundi 27 novembre 2017-15:44:59

Dernière modification le : mercredi 9 mars 2022-14:14:03

Fichier non déposé

Dates et versions

hal-01649561 , version 1 (27-11-2017)

Identifiants

  • HAL Id : hal-01649561 , version 1

Citer

C.O. Maïga, Boubekeur Tala-Ighil, H. Toutah, Bertrand Boudart. Behaviour of punch - through and non - punch – through insulated gate bipolar transistors under high temperature gate bias stress. IEEE International Symposium on Industrial Electronics, 2004, Ajaccio, France. ⟨hal-01649561⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

COMUE-NORMANDIE UNICAEN LUSAC
21 Consultations
0 Téléchargements

Partager

More