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Communication Dans Un Congrès Année : 2004

Behaviour of punch - through and non - punch – through insulated gate bipolar transistors under high temperature gate bias stress

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hal-01649561 , version 1 (27-11-2017)

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  • HAL Id : hal-01649561 , version 1

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C.O. Maïga, Boubekeur Tala-Ighil, H. Toutah, Bertrand Boudart. Behaviour of punch - through and non - punch – through insulated gate bipolar transistors under high temperature gate bias stress. IEEE International Symposium on Industrial Electronics, 2004, Ajaccio, France. ⟨hal-01649561⟩
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