State creation under gate bias stress in polysilicon TFT’s studied from the temperature – transfer characteristics behavior - Archive ouverte HAL
Communication Dans Un Congrès Année : 2002

State creation under gate bias stress in polysilicon TFT’s studied from the temperature – transfer characteristics behavior

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Sciences de l'ingénieur [physics] Electronique

Bertrand BOUDART  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01649448

Soumis le : lundi 27 novembre 2017-15:12:41

Dernière modification le : vendredi 24 mars 2023-14:53:05

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hal-01649448 , version 1 (27-11-2017)

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  • HAL Id : hal-01649448 , version 1

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H. Toutah, Jean-François Llibre, Boubekeur Tala-Ighil, Bertrand Boudart, Tayeb Mohammed-Brahim. State creation under gate bias stress in polysilicon TFT’s studied from the temperature – transfer characteristics behavior. European Materials Research Society, 2002, Strasbourg, France. ⟨hal-01649448⟩

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