State creation under gate bias stress in polysilicon TFT’s studied from the temperature – transfer characteristics behavior - Archive ouverte HAL Access content directly
Conference Papers Year : 2002

State creation under gate bias stress in polysilicon TFT’s studied from the temperature – transfer characteristics behavior

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Engineering Sciences [physics] Electronics

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Submitted on : Monday, November 27, 2017-3:12:41 PM

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hal-01649448 , version 1 (27-11-2017)

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  • HAL Id : hal-01649448 , version 1

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H. Toutah, Jean-François Llibre, Boubekeur Tala-Ighil, Bertrand Boudart, Tayeb Mohammed-Brahim. State creation under gate bias stress in polysilicon TFT’s studied from the temperature – transfer characteristics behavior. European Materials Research Society, 2002, Strasbourg, France. ⟨hal-01649448⟩

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