Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour - Archive ouverte HAL
Journal Articles Microelectronics Reliability Year : 2011

Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour

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Engineering Sciences [physics] Electronics

Bertrand BOUDART  : Connect in order to contact the contributor

https://hal.science/hal-01647883

Submitted on : Friday, November 24, 2017-4:17:09 PM

Last modification on : Wednesday, August 2, 2023-4:40:25 PM

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hal-01647883 , version 1 (24-11-2017)

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B. Tala-Ighil, A. Oukaour, H. Gualous, B. Boudart, B. Pouderoux, et al.. Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour. Microelectronics Reliability, 2011, 51 (9-11), pp.2010 - 2014. ⟨10.1016/j.microrel.2011.06.049⟩. ⟨hal-01647883⟩

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