State creation under gate-bias stress in polysilicon TFTs studied from the temperature-transfer characteristics behavior - Archive ouverte HAL Access content directly
Journal Articles Thin Solid Films Year : 2003

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hal-01647833 , version 1 (24-11-2017)

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H. Toutah, Jean-François Llibre, B. Tala-Ighil, B. Boudart, T. Mohammed-Brahim. State creation under gate-bias stress in polysilicon TFTs studied from the temperature-transfer characteristics behavior. Thin Solid Films, 2003, 427 (1-2), pp.340 - 344. ⟨10.1016/S0040-6090(02)01209-9⟩. ⟨hal-01647833⟩
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