Small- and large-signal measurements of low-temperature GaAs FETs
Résumé
Low-temperature (LT) GaAs FETs have been realized for high I × V products. They have been extensively characterized under dc, rf, pulsed, and large-signal conditions. The results are analyzed and related to the device structure. The electrical passivant role of the LT GaAs has been demonstrated. Under dc conditions I × V products of 2.5 W/mm are obtained. Under microwave frequencies, only 0.4 W/mm were measured on this device. We discuss the relationship between the dielectric relaxation of LT GaAs and the low-power performance of the device. New device structures are proposed.