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Article Dans Une Revue Microwave and Optical Technology Letters Année : 1996

Small- and large-signal measurements of low-temperature GaAs FETs

Résumé

Low-temperature (LT) GaAs FETs have been realized for high I × V products. They have been extensively characterized under dc, rf, pulsed, and large-signal conditions. The results are analyzed and related to the device structure. The electrical passivant role of the LT GaAs has been demonstrated. Under dc conditions I × V products of 2.5 W/mm are obtained. Under microwave frequencies, only 0.4 W/mm were measured on this device. We discuss the relationship between the dielectric relaxation of LT GaAs and the low-power performance of the device. New device structures are proposed.

Dates et versions

hal-01647683 , version 1 (24-11-2017)

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B. Boudart, Christophe Gaquière, S. Trassaert, Didier Theron, B. Splingart, et al.. Small- and large-signal measurements of low-temperature GaAs FETs. Microwave and Optical Technology Letters, 1996, 12 (2), pp.57 - 59. ⟨10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M⟩. ⟨hal-01647683⟩
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