Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2016

Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors

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Engineering Sciences [physics]

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https://hal.science/hal-01647000

Submitted on : Friday, November 24, 2017-9:19:40 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-01647000 , version 1 (24-11-2017)

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Fanny Berthet, Sébastien Petitdidier, Yannick Guhel, Jean Lionel Trolet, Patrick Mary, et al.. Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors. IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1918 - 1926. ⟨10.1109/TNS.2016.2566683⟩. ⟨hal-01647000⟩

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