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Article Dans Une Revue Microelectronics Reliability Année : 2015

Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs

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hal-01646909 , version 1 (23-11-2017)

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S. Petitdidier, F. Berthet, Y. Guhel, J.L. Trolet, P. Mary, et al.. Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. Microelectronics Reliability, 2015, 55 (9-10), pp.1719 - 1723. ⟨10.1016/j.microrel.2015.06.070⟩. ⟨hal-01646909⟩
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