Trench insulated gate bipolar transistors submitted to high temperature bias stress - Archive ouverte HAL
Journal Articles Microelectronics Reliability Year : 2005

Trench insulated gate bipolar transistors submitted to high temperature bias stress

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Engineering Sciences [physics] Electronics

Bertrand BOUDART  : Connect in order to contact the contributor

https://hal.science/hal-01646872

Submitted on : Thursday, November 23, 2017-7:38:28 PM

Last modification on : Wednesday, August 2, 2023-4:40:25 PM

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hal-01646872 , version 1 (23-11-2017)

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C.O. Maïga, H. Toutah, B. Tala-Ighil, B. Boudart. Trench insulated gate bipolar transistors submitted to high temperature bias stress. Microelectronics Reliability, 2005, 45 (9-11), pp.1728 - 1731. ⟨10.1016/j.microrel.2005.07.098⟩. ⟨hal-01646872⟩

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