Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy - Archive ouverte HAL
Article Dans Une Revue Microelectronics Reliability Année : 2011

Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy

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Sciences de l'ingénieur [physics] Electronique

Bertrand BOUDART  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01646870

Soumis le : jeudi 23 novembre 2017-19:35:58

Dernière modification le : mercredi 24 janvier 2024-09:54:18

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hal-01646870 , version 1 (23-11-2017)

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F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J.L. Trolet, et al.. Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy. Microelectronics Reliability, 2011, 51 (9-11), pp.1796 - 1800. ⟨10.1016/j.microrel.2011.07.022⟩. ⟨hal-01646870⟩

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