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Journal Articles Microwave and Optical Technology Letters Year : 1999

Uniformity improvement of linear power pHEMTs using a very high selective wet etching

Abstract

The realization and characterization of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs multifinger linear power pHEMTs, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity for both the drain current and pinch-off voltage values have been obtained. The linearity is confirmed by a quasiflat profile of the transconductance and of the maximum available gain (MAG) over a wide gate source voltage. Power and intermodulation distortion measurements at 16 GHz have been performed. An IP3 value of 25 dBm has been obtained for a 2×75 μm device.

Dates and versions

hal-01646851 , version 1 (23-11-2017)

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X. Hue, B. Boudart, B. Bonte, Y. Crosnier. Uniformity improvement of linear power pHEMTs using a very high selective wet etching. Microwave and Optical Technology Letters, 1999, 23 (3), pp.192 - 194. ⟨10.1002/(SICI)1098-2760(19991105)23:3<192::AID-MOP18>3.0.CO;2-5⟩. ⟨hal-01646851⟩
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