Raman characterization before and after rapid thermal annealing of CeO 2 thin films grown by rf sputtering on (111) Si - Archive ouverte HAL Access content directly
Journal Articles Journal of Raman Spectroscopy Year : 2009

Raman characterization before and after rapid thermal annealing of CeO 2 thin films grown by rf sputtering on (111) Si

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Engineering Sciences [physics]

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https://hal.science/hal-01646844

Submitted on : Thursday, November 23, 2017-6:52:53 PM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-01646844 , version 1 (23-11-2017)

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Y. Guhel, M. T. Ta, J. Bernard, B. Boudart, J. C. Pesant. Raman characterization before and after rapid thermal annealing of CeO 2 thin films grown by rf sputtering on (111) Si. Journal of Raman Spectroscopy, 2009, 40 (4), pp.401 - 404. ⟨10.1002/jrs.2140⟩. ⟨hal-01646844⟩

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