Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs - Archive ouverte HAL Access content directly
Poster Communications Year : 2016

Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs

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hal-01641574 , version 1 (20-11-2017)

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  • HAL Id : hal-01641574 , version 1

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Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Ezgi Dogmus, et al.. Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs . EMRS Fall Meeting, Sep 2016, Varsovie, Poland. ⟨hal-01641574⟩
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