Characterization and metrology of nanoclusters-based nanostructures
Résumé
Silicon nanoclusters have attracted much interest during the past few years due to their optical and electrical properties (light emission, carrier storage...). These properties are strongly dependent on structural characteristics of nanoclusters (Si-nanoclusters size, distribution, surrounding matrix composition, interface nature...). Thus it is essential to provide characterization procedures which fully describe such systems. Unfortunately, conventional analysis methods such as HRTEM, EFTEM or X-ray diffraction often encounter severe difficulties to measure these parameters. In the present study, Atom Probe Tomography (APT) has been used to investigate structural properties of silicon nanoclusters embedded in silica. We studied SiOx/SiO2 MLs which are composed of 4 nm thick SiOx layers and 4nm thick SiO2 layers containing Si-ncs. Bulk silicon dioxide doped with Erbium and containing Si-ncs dedicated to light amplification has also been studied. We compare data provided by HRTEM, APT and previous studies found in the literature.
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